?2004 osaoptolightgmbh?tel.+49(0)3065762683? fax+49(0)3065762681?contact@osaopto.com infra-red item no.: 125244 1. thisspecificationappliestogaalas/gaalasle dchips(substrateremoved) 2. structure 2.1 mesastructure 2.2 electrodes pside(anode) aualloy nside(cathode) aualloy 3. outlines(dimensionsinmicrons) wirebondcontactscanalsobesquare 4. electricalandopticalcharacteristics(t=25c) parameter symbol conditions min typ max unit forwardvoltage v f i f =20ma 1,50 2,00 v reversevoltage v r i r =10 m a 5 v outputpower* f e i f =20ma 2,5 3,2 mw switchingtime t r ,t f i f =20ma 40 ns peakwavelength l i f =20ma 810 nm powermeasurementatosaongoldplate 5. packing diceonadhesivefilmwith1)wirebondsideonto p 2)backcontactontop 6. labeling type lotno. f e typ quantity min max pepitaxygaalas pelectrode nelectrode nepitaxygaalas activelayer 150 typ. 365 120 365
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